MOS threshold shifting by ion implantation

This publication has 8 references indexed in Scilit:

• Threshold shift calculations for ion implanted MOS devices
  Solid-State Electronics, 1972
• Characteristics of p-channel MOS field effect transistors with ion-implanted channels
  Solid-State Electronics, 1972
• Ion-implanted complementary MOS transistors in low-voltage circuits
  IEEE Journal of Solid-State Circuits, 1972
• A complementary MOS 1.2 volt watch circuit using ion implantation
  Solid-State Electronics, 1972
• THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION
  Applied Physics Letters, 1971
• The influence of non-uniformly doped substrates on mos C-V curves
  Solid-State Electronics, 1970
• Silicon gate technology
  Solid-State Electronics, 1970
• Barrier energies in MOS structures
  IEEE Transactions on Electron Devices, 1966