A complementary MOS 1.2 volt watch circuit using ion implantation
- 1 February 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (2) , 165-174
- https://doi.org/10.1016/0038-1101(72)90050-0
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Glass Source Diffusion in Si and SiO[sub 2]Journal of the Electrochemical Society, 1971
- Complementary MOS field-effect transistors on high-resistivity silicon substratesSolid-State Electronics, 1969
- Physical limitations of MOS structuresSolid-State Electronics, 1969
- Complementary-MOS low-power low-voltage integrated binary counterProceedings of the IEEE, 1969
- Theoretical threshold voltages for MOS field effect transistorsSolid-State Electronics, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Complementary MOS transistorsSolid-State Electronics, 1966
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965