Non-random single event upset trends
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 2324-2329
- https://doi.org/10.1109/23.45443
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Calibrated charged particle radiation system with precision dosimetric measurement and controlNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- A distribution function for double-bit upsetsIEEE Transactions on Nuclear Science, 1989
- Low temperature proton induced upsets in NMOS resistive load static RAMIEEE Transactions on Nuclear Science, 1988
- Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K*1 NMOS SRAMsIEEE Transactions on Nuclear Science, 1988
- The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMsIEEE Transactions on Nuclear Science, 1984
- Use of an Ion Microbeam to Study Single Event Upsets in MicrocircuitsIEEE Transactions on Nuclear Science, 1981