The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMs

1 January 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 31 (6) , 1175-1177
https://doi.org/10.1109/tns.1984.4333477

Abstract

The sensitivity to single event upsets induced by 40 MeV protons for three types of Integrated Device Technology, Inc. static RAMs has been shown to increase with total dose exposure.

Keywords

SINGLE EVENT UPSET
PROTONS
MONITORING
MOS DEVICES
SOFTWARE TESTING
DEGRADATION
AUTOMATIC TESTING
VOLTAGE
READ-WRITE MEMORY
CURRENT MEASUREMENT

This publication has 2 references indexed in Scilit:

Single Event Upset Measurements of Gaas E-JFET RAMS
IEEE Transactions on Nuclear Science, 1983
Dose Dependence of Single Event Upset Rate in MOS dRAMS
IEEE Transactions on Nuclear Science, 1983