Dose Dependence of Single Event Upset Rate in MOS dRAMS
Open Access
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4508-4513
- https://doi.org/10.1109/tns.1983.4333162
Abstract
The upset sensitivity of MOS dynamic RAMs has been found to decrease as a result of total dose irradiation, both for cobalt-60 gammas and MeV helium ions, up to the point where device failure is imminent. Device failure levels have been compared for cobalt-60 gammas, and MeV helium ions and protons. It has been found that in terms of rad(Si) necessary to cause device failure, cobalt-60 was more effective than protons which were more effective than helium ions.Keywords
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