The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS Devices
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1966-1969
- https://doi.org/10.1109/TNS.1982.4336479
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ionization of SiO2 by Heavy Charged ParticlesIEEE Transactions on Nuclear Science, 1981
- Inverter Hardness Predictions and Correlation with LSI Device Failure DosesIEEE Transactions on Nuclear Science, 1980
- Charge Yield and Dose Effects in MOS Capacitors at 80 KIEEE Transactions on Nuclear Science, 1976
- Hole and electron transport in SiO2 filmsJournal of Applied Physics, 1974
- Zur Theorie der Ionisation in KolonnenAnnalen der Physik, 1913