Noise measurements in ion implanted mosfets
- 31 August 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (8) , 747-751
- https://doi.org/10.1016/0038-1101(83)90035-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Discrimination between 1/f noise models in junctions field effect transistors and metal-oxide-semiconductor field effect transistors: Numerical resultsJournal of Applied Physics, 1981
- Discrimination between two noise models in metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1981
- Flicker noise of hot electrons in silicon at T = 78 KPhysics Letters A, 1980