Theoretical investigation of soft x-ray emission from a Si(100) layer buried in GaAs
- 1 March 1998
- Vol. 49 (3) , 181-184
- https://doi.org/10.1016/s0042-207x(97)00175-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- STM studies of island formation and surface ordering of Si on GaAs (001), (2×4) and c(4×4): Implications for δ-dopingJournal of Materials Science: Materials in Electronics, 1996
- Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emissionPhysical Review B, 1995
- Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theoryComputer Physics Communications, 1994
- The lattice locations of silicon atoms in delta-doped layers in GaAsJournal of Applied Physics, 1993
- Generalized norm-conserving pseudopotentialsPhysical Review B, 1989
- Pseudopotentials that work: From H to PuPhysical Review B, 1982
- Efficacious Form for Model PseudopotentialsPhysical Review Letters, 1982
- Norm-Conserving PseudopotentialsPhysical Review Letters, 1979
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964