Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
- 15 September 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (12) , R8643-R8645
- https://doi.org/10.1103/physrevb.52.r8643
Abstract
It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.Keywords
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