Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5) , 469-471
- https://doi.org/10.1063/1.102768
Abstract
GaAs has been grown on pseudomorphic Si (100) surfaces and (100) surfaces misoriented 4° toward [011] and [001] in order to study the quality of the GaAs on Si interface in the absence of misfit dislocations. We obtain completely two-dimensional single-domain GaAs epitaxy after only 80 Å of deposition as observed by in situ high-energy electron diffraction. Transmission electron microscopy verifies that the GaAs grown on pseudomorphic Si is free of antiphase domains and other notable defects.Keywords
This publication has 8 references indexed in Scilit:
- Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxyApplied Physics Letters, 1989
- Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructuresApplied Physics Letters, 1989
- Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxyJournal of Crystal Growth, 1987
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984