The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L173-175
- https://doi.org/10.1143/jjap.26.l173
Abstract
Single domain GaAs layers were successfully grown on double domain Si(001) substrates by molecular beam epitaxy (MBE). During the growth, reflection high energy electron diffraction (RHEED) patterns of GaAs films grown on the Si substrates were monitored in situ. They changed gradually from initial spotty unreconstructed patterns to As stabilized (001)2×4 patterns. The morphologies of as grown surfaces and molten KOH etched surfaces of the films were observed by Nomarski optical microscope and also indicate that the films were single domain.Keywords
This publication has 21 references indexed in Scilit:
- Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)Japanese Journal of Applied Physics, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and filmsJournal of Vacuum Science & Technology B, 1983
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- Si(111) surface structures by glancing-incidence high-energy electron diffractionActa Crystallographica Section A, 1972
- Antiphase boundaries in semiconducting compoundsJournal of Physics and Chemistry of Solids, 1969