GaAs Light Emitting Diodes Fabricated on SiO2/Si Wafers
- 1 July 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (7A) , L450
- https://doi.org/10.1143/jjap.22.l450
Abstract
GaAs LEDs have been successfully realized on thermally oxidized Si wafers. Ge layers were recrystallized on tungsten coated SiO2/Si wafers and used as substrates for GaAs epitaxial growth. Light emission of around 9000 Å was observed at room temperature.Keywords
This publication has 3 references indexed in Scilit:
- Ge-seeded crystallisation on SiO 2 by using a slider system with RF heated strip heaterElectronics Letters, 1983
- Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor depositionApplied Physics Letters, 1982
- Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowthApplied Physics Letters, 1982