Ge-seeded crystallisation on SiO 2 by using a slider system with RF heated strip heater
- 14 April 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (8) , 274-275
- https://doi.org/10.1049/el:19830192
Abstract
A slider system has been developed for crystallisation of semiconductor films on SiO2. The system consists of a graphite support, graphite strip heater and movable quartz substrate holder. A two heater procedure can be achieved with an RF heating coil. Single-crystal Ge films have been successfully grown over SiO2 on a Si substrate using a hetero lateral epitaxy by seeded solidification technique.Keywords
This publication has 1 reference indexed in Scilit:
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980