Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures
- 31 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5) , 445-447
- https://doi.org/10.1063/1.101870
Abstract
The nature and behavior of antiphase boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP, and GaAsP/GaAs strained-layer superlattices as intermediate layers have been studied by transmission electron microscopy. The antiphase domains are found to be very complicated three-dimensional polygons consisting of several subboundaries in different orientations. Self-annihilation of antiphase domains during crystal growth of GaAs on (001) 0.4° off or (001) 2° off Si substrates is directly observed for the first time through plan-view and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is presented.Keywords
This publication has 18 references indexed in Scilit:
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on SiJournal of Crystal Growth, 1988
- Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVDJapanese Journal of Applied Physics, 1987
- Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVDJapanese Journal of Applied Physics, 1987
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- Atomic structure of the GaAs/Si interfaceApplied Physics Letters, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- MOCVD GaAs growth on Ge (100) and Si (100) substratesJournal of Crystal Growth, 1986
- High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interfaceApplied Physics Letters, 1986
- A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffractionJournal of Applied Crystallography, 1982