Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 494-498
- https://doi.org/10.1016/0022-0248(88)90572-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Room-temperature continuous operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on SiApplied Physics Letters, 1987
- Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-yJapanese Journal of Applied Physics, 1987
- Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substratesApplied Physics Letters, 1987
- Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVDJapanese Journal of Applied Physics, 1987
- Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structuresApplied Physics Letters, 1986