X-ray emission spectra and electronic structure of amorphous silicon
- 1 March 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 70 (2) , 187-198
- https://doi.org/10.1016/0022-3093(85)90318-7
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Photoemission and photoyield of amorphous Si filmsPhysical Review B, 1983
- Effects of quantitative disorder on the electronic structures of Si and GePhysical Review B, 1981
- Influence of disorder on the electronic structure of amorphous siliconPhysical Review B, 1981
- On the structure of noncrystalline Si and Si1–xHx filmsPhysica Status Solidi (a), 1980
- Theory of fluctuations and localized states in amorphous tetrahedrally bounded solidsPhysical Review B, 1977
- Comparison of an Amorphous CBS Structure Model of Amorphous Silicon with X-Ray and Electron Scattering DataPhysica Status Solidi (b), 1974
- Computer‐Generated Structures of Amorphous GePhysica Status Solidi (b), 1973
- Electronic Properties of Complex Crystalline and Amorphous Phases of Ge and Si. I. Density of States and Band StructuresPhysical Review B, 1973
- High energy x-ray satellites ofL 2,3 emission bands of Na, Mg, Al, and SiThe European Physical Journal A, 1972
- Calculation of density of states for crystalline and amorphous III‐V semiconductorsPhysica Status Solidi (b), 1971