Characteristics of the emitter-switched thyristor

This publication has 5 references indexed in Scilit:

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  IEEE Electron Device Letters, 1990
• The MOS depletion-mode thyristor: a new MOS-controlled bipolar power device
  IEEE Electron Device Letters, 1988
• MOS Controlled thyristors (MCT's)
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
• The COMFET—A new high conductance MOS-gated device
  IEEE Electron Device Letters, 1983
• The insulated gate rectifier (IGR): A new power switching device
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982