The MOS depletion-mode thyristor: a new MOS-controlled bipolar power device
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 411-413
- https://doi.org/10.1109/55.761
Abstract
A new MOS-bipolar power device in which forced-gate turn-off is achieved using a depletion region formed by an MOS gate structure is described. This device, called the depletion-mode thyristor (DMT), offers many highly desired features for high-voltage power switching applications: a) low ON-state drop, b) high input impedance, c) three-terminal operation, d) equivalent complementary devices, and e) high maximum controllable current. Experimental verification of device operation has been achieved using a UMOS gate technology.Keywords
This publication has 6 references indexed in Scilit:
- Turn-On Principles of the MOS-GTOIEEE Transactions on Power Electronics, 1987
- "Insulated gate bipolar transistor (IGBT) with a trench gate structure "Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- The insulated gate transistor: A new three-terminal MOS-controlled bipolar power deviceIEEE Transactions on Electron Devices, 1984
- MOS Controlled thyristors (MCT's)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristorsElectronics Letters, 1979