Electron Beam Induced Changes of the Real Structure of Semiconductors
- 1 January 1979
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 14 (11) , 1405-1411
- https://doi.org/10.1002/crat.19790141121
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Micromorphology and defects of non‐doped gallium arsenide layersCrystal Research and Technology, 1978
- Defects in electron-irradiated germaniumPhilosophical Magazine, 1976
- Defect Clusters in Germanium Crystals Irradiated with Electrons in a High Voltage Electron MicroscopeJapanese Journal of Applied Physics, 1976
- Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperaturePhysica Status Solidi (a), 1975
- The dynamic observation of the formation of defects in silicon under electron and proton irradiationPhilosophical Magazine, 1973
- Diffusion in Silicon and GermaniumPublished by Springer Nature ,1973
- The nature of rod-like defects observed in boron irradiated siliconRadiation Effects, 1972
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971
- The solubility of carbon in pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1971
- Electron Microscopy of Thin CrystalsPhysics Today, 1966