Diffusion in Silicon and Germanium

This publication has 300 references indexed in Scilit:

• Anomalous diffusion in semiconductorsȁa quantitative analysis
  Solid-State Electronics, 1970
• The orientation dependent diffusion of boron in silicon under oxidizing conditions
  Solid-State Electronics, 1969
• Solubility and diffusion coefficient of sodium and potassium in silicon
  Solid-State Electronics, 1967
• X-ray measurement of elastic strain and lattice constant of diffused silicon
  Solid-State Electronics, 1967
• Creation and motion of dislocations in silicon surface layers
  Discussions of the Faraday Society, 1964
• Diffusant impurity-concentration profiles in thin layers on silicon
  Solid-State Electronics, 1962
• Die bestimmung des diffusionskoeffizienten von Arsen an pn-Übergängen in Germanium
  Solid-State Electronics, 1962
• Field-retarded diffusion of antimony in germanium
  Solid-State Electronics, 1961
• Detailed analysis of thin phosphorus-diffused layers in p-type silicon
  Solid-State Electronics, 1961
• Diffusion of arsenic in germanium from the vapour phase
  Solid-State Electronics, 1961