TSC defect level in silicon produced by irradiation with muons of GeV-energy
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 29 (1) , 25-26
- https://doi.org/10.1080/00337577608233479
Abstract
Thermally stimulated current (TSC) measurements on n-type silicon : hat is irradiated with high energy muons show the introduction of a defect with energy level 0.40 eV and an introduction rate of 0.2 cm−1.Keywords
This publication has 4 references indexed in Scilit:
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- Determination of the neutrino spectrum in the CERN 1967 neutrino experimentNuclear Instruments and Methods, 1971
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965