Chromium gettering in GaAs by oxygen implantation
- 15 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 271-273
- https://doi.org/10.1063/1.92303
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Niveaux profonds dans le GaAs implanté boreRevue de Physique Appliquée, 1980
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- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- Low-noise GaAs FET's prepared by ion implantationIEEE Transactions on Electron Devices, 1978