Selective Deposition of Silicon Oxide Using a Plasma-Fluorinated Resist Mask
- 1 July 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (7R) , 1172-1175
- https://doi.org/10.1143/jjap.27.1172
Abstract
The characteristics of plasma-fluorinated resist as a deposition preventive mask for the selective deposition of silicon oxide is investigated. It is shown that the surface energy of conventional photoresist is markedly decreased by NF3 plasma. This fluorinated resist mask accomplishes the selective deposition of silicon oxide by the hydrolysis reaction of SiCl4.Keywords
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