An automatic X-Y scanning controller for laser annealing of ion-implanted semiconductors
- 1 July 1982
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 15 (7) , 705-707
- https://doi.org/10.1088/0022-3735/15/7/003
Abstract
An apparatus for automatic X-Y scanning of ion-implanted samples during laser annealing based on a Z-80 microcomputer is described. The laser beam reflected back from the semiconductor surface is used as a diagnostic signal to control the X and Y scans. The microcomputer is used to generate a pulse with a proper time delay to trigger the laser, to sense the reflected light and to determine when and how to scan the X- and Y-stepping motors.Keywords
This publication has 3 references indexed in Scilit:
- Light-flash induced metallic silicides from titanium films on siliconApplied Physics Letters, 1981
- The plasma z-pinch effect on the I-V characteristic of fast discharge flash tubesJournal of Applied Physics, 1980
- A laser-scanning apparatus for annealing of ion-implantation damage in semiconductorsApplied Physics Letters, 1978