Silicon loss during TiSi2 formation
- 1 June 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (11) , 5187-5189
- https://doi.org/10.1063/1.338297
Abstract
When Ti‐Si diffusion couples are annealed in vacuum to form TiSi2, most of the oxygen contamination in the as‐deposited metal film is lost. An experiment demonstrating that a Si loss also takes place is presented, thus confirming that the oxygen loss occurs by SiO sublimation.This publication has 14 references indexed in Scilit:
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