The Effect of Oxygen in Cosputtered (Titanium + Silicon) Films
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The effect of oxygen incorporation on the growth and microstructure of TiSi2 has been investigated. Cosputtered films, with Si/Ti ratios between one and three, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Both Auger electron spectroscopy, in conjunction with sputter profiling, and Rutherford backscattering spectrometry indicate that oxygen in the as-deposited films redistributes to the silicide-silicon interface upon heating. Cross sectional transmission electron microscope images show that the oxygen is present as an amorphous oxide.Keywords
This publication has 3 references indexed in Scilit:
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- Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.Journal of Applied Physics, 1980