Shallow Junction Formation by the Redistribution of Species Implanted into Cobalt Silicide
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A self-aligned CoSi2interconnection and contact technology for VLSI applicationsIEEE Transactions on Electron Devices, 1987
- Direct silicidation of Co on Si by rapid thermal annealingIEEE Transactions on Electron Devices, 1987
- A self-aligned cobalt silicide technology using rapid thermal processingJournal of Vacuum Science & Technology B, 1986
- Epitaxial nickel and cobalt suicide formation by rapid thermal annealingApplied Physics A, 1986
- As+ implantation and transient annealing of MoSi2 thin filmsJournal of Vacuum Science & Technology A, 1985