Theoretical study of the band offset at silicon-oxide/silicon interfaces with interfacial defects
- 1 June 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 407 (1-3) , 133-139
- https://doi.org/10.1016/s0039-6028(98)00157-5
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- SiO2 valence band near the SiO2/Si(111) interfaceApplied Surface Science, 1997
- Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formationSurface Science, 1997
- Laplace transform method of measuring the distribution of Si–SiO2 barrier heights: Basic principlesJournal of Applied Physics, 1995
- Determination of Valence Band Alignment at Ultrathin SiO2/Si Interfaces by High-Resolution X-Ray Photoelectron SpectroscopyJapanese Journal of Applied Physics, 1995
- Atomic and electronic structures of an interface between silicon and β-cristobalitePhysical Review B, 1990
- Soft self-consistent pseudopotentials in a generalized eigenvalue formalismPhysical Review B, 1990
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Evaluation of interface potential barrier heights between ultrathin silicon oxides and siliconJournal of Applied Physics, 1985
- Effect of silicon orientation and hydrogen anneal on tunneling from Si into SiO2Journal of Applied Physics, 1983
- Electronic structure of defects at Si/SiO2 interfacesJournal of Vacuum Science and Technology, 1981