Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon
- 15 August 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (4) , 1597-1600
- https://doi.org/10.1063/1.336046
Abstract
Interface potential barrier heights for ultrathin silicon oxides (15– 44 Å) on silicon and effective electron masses in some of these oxides are evaluated. Evaluation is performed using a new technique of analyzing the charging characteristics of metal-nitride-oxide-semiconductor capacitors. Oxides thicker than 36 Å have the same potential barrier heights as those for thick oxides, assuming the effective electron mass of the oxides is the same. However, for oxides thinner than 31 Å, the potential barrier heights decrease and the effective electron masses increase as the oxide thickness decreases. These results suggest that oxides at least thicker than 36 Å can be applied to metal-oxide-semiconductor field-effect transistors as gate oxides.This publication has 9 references indexed in Scilit:
- Photoemission measurements of interface barrier energies for tunnel oxides on siliconApplied Physics Letters, 1980
- XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 InterfaceIEEE Transactions on Nuclear Science, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Dependence of the Si-SiO2 barrier height on SiO2 thickness in MOS tunnel structuresJournal of Applied Physics, 1977
- Characteristics of Cr-SiO2-nSi tunnel diodesSolid-State Electronics, 1977
- Oscillations in MOS tunnelingJournal of Applied Physics, 1975
- Potential barriers to electron tunnelling in ultra-thin films of SiO2Solid State Communications, 1974
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969