A 1.2V 4.5mW 10b 100MS/s Pipeline ADC in a 65nm CMOS
- 1 February 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE International Solid-State Circuits Conference
- No. 01936530,p. 250-611
- https://doi.org/10.1109/isscc.2008.4523151
Abstract
A low-power 1.2 V pipelined ADC is implemented in a 65 nm CMOS process to achieve 10b resolution at 100 MS/s based on the use of a dedicated thin-oxide high-performance analog (HPA) MOS transistor. The pipeline ADC is composed of eight 1.5b pipelined stages followed by a 2b flash converter as the last stage. In order to optimize the power consumption, the capacitances and the bias current of each stage have been scaled down along the pipeline chain. Measurement results of this ADC revealed a SNDR of 59 dB with a power dissipation of 4.5 mW. The core occupies 0.07 mm2, and 0.1 mm2 with the reference.Keywords
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