Role of boron in electrical properties of semi-insulating GaAs grown by the liquid encapsulated Czochralski method
- 26 January 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (4) , 191-193
- https://doi.org/10.1063/1.97658
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocationsApplied Physics Letters, 1986
- GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocationsApplied Physics Letters, 1985
- Quantitative analysis of carbon in liquid-encapsulated Czochralski GaAsJournal of Applied Physics, 1985
- Study of electronic levels in antimony and indium-doped gallium arsenideJournal of Applied Physics, 1985
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Residual double acceptors in bulk GaAsApplied Physics Letters, 1983
- Evidence of the role of boron in undoped GaAs grown by liquid encapsulated CzochralskiApplied Physics Letters, 1982
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978