Quantitative analysis of carbon in liquid-encapsulated Czochralski GaAs
- 15 April 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8) , 2931-2935
- https://doi.org/10.1063/1.335498
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Carbon in semi-insulating, liquid encapsulated Czochralski GaAsApplied Physics Letters, 1984
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- Direct evidence for the site of substitutional carbon impurity in GaAsApplied Physics Letters, 1982
- Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometryIEEE Transactions on Electron Devices, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- Profile distortions and atomic mixing in SIMS analysis using oxygen primary ionsNuclear Instruments and Methods in Physics Research, 1981
- Ion implantation for in-situ quantitative ion microprobe analysisAnalytical Chemistry, 1980
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978