Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions
- 1 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3) , 327-334
- https://doi.org/10.1016/0029-554x(81)91024-7
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Ion implantation and sputtering in the presence of reactive gases: Bombardment-induced incorporation of oxygen and related phenomenaJournal of Applied Physics, 1981
- Dynamic range of 106 in depth profiling using secondary-ion mass spectrometryApplied Physics Letters, 1980
- An AES-SIMS study of silicon oxidation induced by ion or electron bombardmentApplications of Surface Science, 1980
- Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometrySurface and Interface Analysis, 1980
- Aspects of quantitative secondary ion mass spectrometryNuclear Instruments and Methods, 1980
- Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped siliconNuclear Instruments and Methods, 1978
- Model calculation of ion collection in the presence of sputteringRadiation Effects, 1976
- Pre-equilibrium variation of the secondary ion yieldInternational Journal of Mass Spectrometry and Ion Physics, 1975
- Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layersRadiation Effects, 1974
- Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solidsRadiation Effects, 1973