Radiation induced degradation of Si/SiO2 structures and the nature of defects
- 1 March 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 65 (1-4) , 238-242
- https://doi.org/10.1016/0168-583x(92)95041-o
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Spectrum and nature of defects at interfaces of semiconductors with predominant homopolar bondingSurface Science, 1988
- Logarithmic detrapping response for holes injected into SiO2 and the influence of thermal activation and electric fieldsJournal of Applied Physics, 1988
- The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interfaceJournal of Applied Physics, 1984
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Oxygen vacancy creation in SiO2 through ionization energy depositionApplied Physics Letters, 1983
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressingJournal of Applied Physics, 1977
- Effects of ionizing radiation on thin-oxide (20–1500 Å) MOS capacitorsJournal of Applied Physics, 1974
- Hole and electron transport in SiO2 filmsJournal of Applied Physics, 1974
- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971