The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface
- 15 July 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 575-577
- https://doi.org/10.1063/1.333953
Abstract
The generation of positive charge at the Si–SiO2 interface during constant current electron injection has been investigated at low (Avalanche) and high (Fowler–Nordheim) fields at 295 and 77 K on several differently processed metal‐oxide–semiconductor capacitors. It was found that the rate at which the charge is generated increases exponentially with the field at the anode for both polarities and independently of processing variables. It follows that water‐related and other electron traps have the sole effect of enhancing the generation rate by increasing this field. The role of hot‐electron energy losses at the SiO2‐anode interface is also discussed.This publication has 19 references indexed in Scilit:
- Positive charge effects on the flatband voltage shift during avalanche injection on Al-SiO2-Si capacitorsJournal of Applied Physics, 1982
- Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunnelingJournal of Applied Physics, 1982
- Reduction of electron trapping in silicon dioxide by high-temperature nitrogen annealJournal of Applied Physics, 1981
- The effects of water on oxide and interface trapped charge generation in thermal SiO2 filmsJournal of Applied Physics, 1981
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979
- Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressingJournal of Applied Physics, 1977
- Hole traps in silicon dioxideJournal of Applied Physics, 1976
- Hole injection and transport in SiO2 films on SiApplied Physics Letters, 1975
- Theory of Electron-Surface-Plasmons Interactions in Tunneling, Low-Energy-Electron Diffraction, and PhotoemissionPhysical Review B, 1971
- Plasma Losses by Fast Electrons in Thin FilmsPhysical Review B, 1957