Positive charge effects on the flatband voltage shift during avalanche injection on Al-SiO2-Si capacitors

Publisher Website
Google Scholar
Abstract
Electron avalanche injection is performed at various temperatures on Al gate, wet oxide metal‐oxide‐semiconductor capacitors. The observed behavior of the flatband voltage shift versus injected charge is well represented by a phenomenological model which includes the buildup of positively charged defects at the Si‐SiO2 interface, their annealing, and their neutralization by ’’trapped’’ electrons. At high temperatures (T≳350 °K) annealing is very efficient, while for T≲250 °K the positive charge is quickly neutralized. Thus the ’’turn around’’ is observable at room temperature only. The role of trivalent silicon defects and of Si‐H bonds is discussed.