Theoretical Gain In Strained-layer Quantum Wells

Publisher Website

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 32-33
https://doi.org/10.1109/leos.1992.693829

Abstract

First Page of the Article Author(s) Corzine, S.W. University of California Coldren, L.A.

Keywords

This publication has 4 references indexed in Scilit:

InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
Applied Physics Letters, 1990
Gain characteristics of strained quantum well lasers
Applied Physics Letters, 1990
Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness
Applied Physics Letters, 1989
Excitonic transitions in strained-layer ${In}_{x}$ ${Ga}_{1 - x}$ As/InP quantum wells
Physical Review B, 1989