A study of the conduction properties of a rectifying nGaAs-n(Ga, Al)As heterojunction
- 30 June 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (6) , 599-603
- https://doi.org/10.1016/0038-1101(80)90042-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The Liquid Phase Epitaxial Growth of High Purity Ga1 − x Al x AsJournal of the Electrochemical Society, 1980
- Rectification at n-GaAs–n-Ga0.7Al0.3As heterojunctions grown by liquid phase epitaxyJournal of Vacuum Science and Technology, 1979
- Rectification at n-n GaAs:(Ga,Al)As heterojunctionsElectronics Letters, 1979
- Auger profiling studies of LPE n-AlxGa1−xAs–n-GaAs heterojunctions and the absence of rectificationJournal of Vacuum Science and Technology, 1978
- A search for interface states in an LPE GaAs/AlxGa1−xAs heterojunctionApplied Physics Letters, 1977
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- The conduction properties of GeGaAs1−xPxn−n heterojunctionsSolid-State Electronics, 1965
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962