Landau levels at theedge in semiconductors
- 15 April 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (8) , 3022-3030
- https://doi.org/10.1103/physrevb.11.3022
Abstract
The experimental data on the Landau levels at the edge in InSb, GaSb, and Ge is reviewed and analyzed. It is shown how the present data support a surface-effect interpretation and various explanations are examined. Finally, the effect of a reconstructed surface upon the band structure is examined and it is shown how this resolves the discrepancy between experiment and theory based on bulk band structure.
Keywords
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