Orientation dependence of the phase modulation in a p-n junction GaAs/AlxGa1−xAs waveguide
- 12 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2) , 68-70
- https://doi.org/10.1063/1.97875
Abstract
Phase modulation has been measured in a reverse‐biased P‐i‐N GaAs/AlxGa1−xAs double heterostructure with heavily doped (N, P∼1018 cm−3) AlxGa1−xAs layers. These measurements were performed at two wavelengths (1.09 and 1.15 μm), for both TE and TM modes and with light propagating in the [110] and [11̄0] directions. We found that the effective quadratic electro‐optic coefficients R11 and R12 have approximately the same magnitude and sign. The values are −(40±10)×10−17 cm2/V2 and −(54±10)×10−17 cm2/V2 for λ=1.15 μm and λ=1.09 μm, respectively. The contribution of the plasma effect due to the free carrier is comparable and has the same sign.Keywords
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