Triplet bound excitons in copper-doped gallium phosphide
- 1 January 1989
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 48 (1) , 11-24
- https://doi.org/10.1007/bf00617759
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Direct measurement of exchange as a function of separation for discrete donor-acceptor pairs in ZnSePhysical Review B, 1988
- Optically detected magnetic resonance studies of the 1.911-eV Cu-related complex in GaPPhysical Review B, 1988
- Electronic structure of a hole-attractive neutral Cu-related complex-defect bound exciton at 2.345 eV in ZnTePhysical Review B, 1987
- Optical properties and excitation-induced distortions of a trigonal Cu-related neutral complex with a bound exciton at 2.26 eV in ZnTePhysical Review B, 1986
- Optical study of complex formation in Ag-doped CdTePhysical Review B, 1986
- Electronic structure of transition-atom impurities in GaPPhysical Review B, 1985
- Electron Paramagnetic Resonance of Point Defects in Solids, with Emphasis on SemiconductorsPublished by Springer Nature ,1975
- Strain-Dependent Electron Paramagnetic Resonance and Spin-Valley Coupling of Shallow Triplet Sn Donors in GaPPhysical Review B, 1972
- Reflectivity andof GaP between 2.5 and 6.0 eVPhysical Review B, 1972
- Isoelectronic Trap Li-Li-O in GaPPhysical Review B, 1971