Formation of Oxide Layers by High Dose Implantation into Silicon
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Laterally seeded regrowth of silicon over SiO2 through strip electron beam irradiationApplied Physics Letters, 1983
- A negative drain conductance property in a super-thin film buried-channel MOSFET on a buried insulatorIEEE Transactions on Electron Devices, 1983
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in SiliconJapanese Journal of Applied Physics, 1982
- Electron Beam Processing of SemiconductorsMRS Proceedings, 1982
- Zone-Melting Recrystallization of Semiconductor FilmsMRS Proceedings, 1982
- High-voltage buried-channel MOS fabricated by oxygen implantation into siliconElectronics Letters, 1981
- Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal siliconThin Solid Films, 1978
- A study of silicon oxides prepared by oxygen implantation into siliconJournal of Physics D: Applied Physics, 1977
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976