Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
- 24 February 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (8) , 1212-1214
- https://doi.org/10.1063/1.1555709
Abstract
A sheet of spherical, well-separated, crystalline Ge nanodots embedded in on top of a wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid thermal processing and characterized structurally and electrically. The average size of the Ge nanodots was estimated to be 4.5 nm with an average aerial density of situated at 4.4 nm in average away from the interface. Significant charge storage effects were observed through capacitance–voltage measurements of metal–oxide–semiconductor capacitors.
Keywords
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