Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers
- 11 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (2) , 88-90
- https://doi.org/10.1063/1.99042
Abstract
Gain measurements were performed on buried heterostructure single quantum well lasers to ascertain the transparency current density, which represents a basic limit in the threshold current. By using the optimal design approach, a lowest threshold of 0.55 mA in a 120-μm-long device was achieved. Modulation of the low threshold laser by a pseudorandom digital stream at 1.3 Gbit/s without current bias is demonstrated.Keywords
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