Annealing studies on CuIn(Ga)Se 2 : the influence of gallium
- 1 February 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 361-362, 400-405
- https://doi.org/10.1016/s0040-6090(99)00810-x
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin filmsJournal of Applied Physics, 1999
- Characterization of CuIn(Ga)Se2 Thin FilmsPhysica Status Solidi (a), 1998
- Phases, morphology, and diffusion in CuInxGa1−xSe2 thin filmsJournal of Applied Physics, 1997
- Radiative recombination in CuInSe2 thin filmsJournal of Applied Physics, 1997
- Stabilization of Ternary Compounds via Ordered Arrays of Defect PairsPhysical Review Letters, 1997
- Sharp optical emissions from Cu-rich, polycrystalline CuInSe2 thin filmsJournal of Applied Physics, 1997
- Solar Cells Based on CuInSe2 and Related Compounds: Material and Device Properties and ProcessingProgress In Photovoltaics, 1995
- Study of intrinsic defects in vacuum/air annealed CuInSe2Solar Energy Materials, 1991
- Surface passivation of polycrystalline, chalcogenide based photovoltaic cellsSolar Cells, 1991
- Initial oxidation of CuInSe2Journal of Vacuum Science and Technology, 1981