Alternative N-, P- and As-precursors for III/V-epitaxy
- 29 February 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (2-3) , 272-278
- https://doi.org/10.1016/s0022-0248(99)00554-0
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using TertiarybutylhydrazineJapanese Journal of Applied Physics, 1999
- Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBEJournal of Crystal Growth, 1998
- Growth of InP using TBP and DTBP in metalorganic molecular beam epitaxyJournal of Crystal Growth, 1998
- Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and TrimethylgalliumJapanese Journal of Applied Physics, 1997
- Evaluation of cracking efficiency of As and P precursorsJournal of Crystal Growth, 1997
- Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen sourceApplied Physics Letters, 1996
- Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitrideAdvanced Materials for Optics and Electronics, 1996
- New Developments of Less Toxic Group-V Precursors for the Metalorganic Vapour Phase Epitaxy of III–V-Semiconductors: In -Situ-Formation of As–H Functions by Thermal β-Elimination of Specific As-Trialkyl CompoundsJapanese Journal of Applied Physics, 1996
- Metalorganic molecular beam epitaxy of cubic GaN on (100)GaAs substrates using triethylgallium and monomethylhydrazineJournal of Crystal Growth, 1995
- MOVPE growth of cubic GaN on GaAs using dimethylhydrazineJournal of Crystal Growth, 1992