Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by $\mathrm{Si}{\mathrm{H}}_4+{\mathrm{N}}_2$ and $\mathrm{Si}{\mathrm{H}}_4+\mathrm{N}{\mathrm{H}}_3$ plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by $\mathrm{Si}{\mathrm{H}}_4+\mathrm{N}{\mathrm{H}}_3$ plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by $\mathrm{Si}{\mathrm{H}}_4+{\mathrm{N}}_2$ plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of $\mathrm{Si}{\mathrm{H}}_4+\mathrm{N}{\mathrm{H}}_3$ plasma, due to the hydrogen passivation of the defects in the silicon nitride films by $\mathrm{N}{\mathrm{H}}_3$ during the growth of the Si QDs.