Nanometer-scale metal precipitates in multicrystalline silicon solar cells
- 15 April 2001
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (8) , 4282-4288
- https://doi.org/10.1063/1.1330552
Abstract
In this study, we have utilized characterization methods to identify the nature of metal impurity precipitates in low performance regions of multicrystalline silicon solar cells. Specifically, we have utilized synchrotron-based x-ray fluorescence and x-ray absorption spectromicroscopy to study the elemental and chemical nature of these impurity precipitates, respectively. We have detected nanometer-scale precipitates of Fe, Cr, Ni, Cu, and Au in multicrystalline silicon materials from a variety of solar cell manufacturers. Additionally, we have obtained a direct correlation between the impurity precipitates and regions of low light-induced current, providing direct proof that metal impurities play a significant role in the performance of multicrystalline silicon solar cells. Furthermore, we have identified the chemical state of iron precipitates in the low-performance regions. These results indicate that the iron precipitates are in the form of oxide or silicate compound. These compounds are highly stable and cannot be removed with standard silicon processing, indicating remediation efforts via impurity removal need to be improved. Future improvements to multicrystalline silicon solar cell performance can be best obtained by inhibiting oxygen and metal impurity introduction as well as modifying thermal treatments during crystal growth to avoid oxide or silicate formationThis publication has 32 references indexed in Scilit:
- Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline siliconApplied Physics Letters, 1998
- Gettering of metallic impurities in photovoltaic siliconApplied Physics A, 1997
- Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current techniqueApplied Physics Letters, 1993
- EBIC investigations of dislocations and their interactions with impurities in siliconPhysica Status Solidi (a), 1993
- Recombination Activity of Misfit Dislocations in SiliconPhysica Status Solidi (a), 1993
- Localization of the electrical activity of structural defects in polycrystalline siliconJournal of Applied Physics, 1990
- Influence of Extended Defects and Native Impurities on the Electrical Properties of Directionally Solidified Polycrystalline SiliconJournal of the Electrochemical Society, 1988
- Phosphorus gettering and intrinsic gettering of nickel in siliconApplied Physics Letters, 1984
- Gold solubility in silicon and gettering by phosphorusPhysica Status Solidi (a), 1978
- Diffusion Gettering of Au and Cu in SiliconJournal of the Electrochemical Society, 1975