Influence of interface charge inhomogeneities on the measurement of surface state densities in SiSiO2 interfaces by means of the MOS a.c. conductance technique
- 30 November 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (11) , 910-922
- https://doi.org/10.1016/0038-1101(77)90013-2
Abstract
No abstract availableKeywords
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