Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs
- 31 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 170-173
- https://doi.org/10.1016/s0022-0248(98)01308-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Thermodynamic analysis of GaAs growth by molecular beam epitaxy at the surface structure transition from 3 × 1 to 4 × 2Journal of Crystal Growth, 1993
- Summary Abstract: Structure of interfaces in compositionally modulated amorphous semiconductor superlatticesJournal of Vacuum Science & Technology A, 1986
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984
- Effect of arsenic dimer/tetramer ratio on stability of III–V compound surfaces grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Observations on Bayard–Alpert Ion Gauge Sensitivities to Various GasesJournal of Vacuum Science and Technology, 1971
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968